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DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK1109
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK1109 is suitable for converter of ECM.
PACKAGE DRAWING (Unit: mm)
FEATURES
* Compact package * High forward transfer admittance 1000 S TYP. (IDSS = 100 A) 1600 S TYP. (IDSS = 200 A) * Includes diode and high resistance at G - S
0.8
1.8 MIN.
1. Source 2. Drain 3. Gate 1 2
PART NUMBER 2SK1109
PACKAGE SC-59 (MM)
1.1
1.8 MIN.
ORDERING INFORMATION
3 2.9 0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Junction Temperature Storage Temperature Note VGS = -1.0 V Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
Note
VDSX VGDO ID IG PT Tj Tstg
20 -20 10 10 80 125 -55 to +125
V V mA mA mW C C
EQUIVALENT CIRCUIT
Drain
Gate
Source
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D15940EJ1V0DS00 (1st edition) Date Published January 2002 NS CP(K) Printed in Japan
5.5 0.4
1.5
(c)
2002
2SK1109
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Cut-off Current Gate Cut-off Voltage Forward Transfer Admittance Forward Transfer Admittance Input Capacitance Noise Voltage SYMBOL IDSS VGS(off) | yfs1 | | yfs2 | Ciss NV TEST CONDITIONS VDS = 5.0 V, VGS = 0 V VDS = 5.0 V, ID = 1.0 A VDS = 5.0 V, ID = 30 A, f = 1.0 kHz VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz VDS = 5.0 V, VGS = 0 V, f = 1.0 MHz See Test Circuit MIN. 40 -0.1 350 350 7.0 1.8 8.0 3.0 TYP. MAX. 600 -1.0 UNIT
A
V
S S
pF
V
IDSS RANK
MARKING IDSS (A) 40 to 70 60 to 110 90 to 180 150 to 300 200 to 450 300 to 600 J32 J33 J34 J35 J36 J37
NOISE VOLTAGE TEST CIRCUIT
+4.5 V JIS A NV (r.m.s)
R = 1 k
C = 10 pF
2
Data Sheet D15940EJ1V0DS
2SK1109
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF POWER DISSIPATION
GATE TO SOURCE CURRENT vs. GATE TO SOURCE VOLTAGE 40 30
dT - Derating Factor - %
100 80 60 40 20 0
IG - Gate Current - A
20 10 -1.0 -0.8 -0.6 -0.4 -0.2 -10 -20 -30 -40 0 0.2 0.4 0.6 0.8 1.0
20
40
60
80
100
120 140 160
TA - Ambient Temperature - C
VGS - Gate to Source Voltage - V
DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 1.0
INPUT CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 VDS = 0 V f = 1.0 MHz
VDS = 5 V
ID - Drain Current - mA
IDS IDSS = S = 2 30 0 =1 0 00 0 A A A
0.8
CiSS - Input Capacitance - pF
50 20 10 5
0.6
0.4
0.2
IDS
S
2 1 1 2 5 10 20 50 100
-0.6
-0.4
-0.2
0
+0.2
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
VGS (off) - Gate to Source Cut-off Voltage - V |yfs| - Forward Transfer Admittance - S
GATE TO SOURCE CUT-OFF VOLTAGE AND FORWARD TRANSFER ADMITTANCE vs. ZERO-GATE VOLTAGE DRAIN CURRENT CO-RELATION 10.0 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 10 20 50 100 200 500 1000 Zero-Gate Voltage Drain Current - A VGS (off) |yfs| VDS = 5 V
Data Sheet D15940EJ1V0DS
3
2SK1109
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 250 RANK: J32 0.15 V 300
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE RANK: J33 0.15 V
ID - Drain Current - A
ID - Drain Current - A
200 0.10 V 150 100 50 0 0.05 V VGS = 0 V -0.05 V -0.10 V 0 2 4 6 -0.15 V 8 10
240 0.10 V 180 120 60 0 0.05 V VGS = 0 V -0.05 V -0.10 V 0 2 4 6 -0.15 V 8 10
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 400 RANK: J34 0.15 V
500
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE RANK: J35 0.15 V 0.10 V
ID - Drain Current - A
ID - Drain Current - A
320 240 160 80 0
0.10 V
400 300 200 100 0
0.05 V VGS = 0 V -0.05 V -0.10 V 0 2 4 6 -0.15 V 8 10
0.05 V VGS = 0 V -0.05 V -0.10 V -0.15 V 6
0
2
4
8
10
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 700 RANK: J36 0.15 V 0.10 V 0.05 V VGS = 0 V 280 140 0 -0.05 V -0.10 V -0.15 V 0 2 4 6 8 10
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 900 RANK: J37 0.15 V 0.10 V 0.05 V 540 VGS = 0 V 360 180 -0.15 V 0 0 2 4 6 8 10 -0.05 V -0.10 V
ID - Drain Current - A
420
VDS - Drain to Source Voltage - V
ID - Drain Current - A
560
720
VDS - Drain to Source Voltage - V
4
Data Sheet D15940EJ1V0DS
2SK1109
[MEMO]
Data Sheet D15940EJ1V0DS
5
2SK1109
[MEMO]
6
Data Sheet D15940EJ1V0DS
2SK1109
[MEMO]
Data Sheet D15940EJ1V0DS
7
2SK1109
* The information in this document is current as of January, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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